Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented.

A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model / Crippa, Paolo; Biagetti, Giorgio; Turchetti, Claudio; Falaschetti, Laura; Mencarelli, Davide; Deligeorgis, George; Pierantoni, Luca. - In: ELECTRONICS. - ISSN 2079-9292. - ELETTRONICO. - 10:22(2021). [10.3390/electronics10222835]

A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model

Crippa, Paolo
;
Biagetti, Giorgio;Turchetti, Claudio;Falaschetti, Laura;Mencarelli, Davide;Pierantoni, Luca
2021-01-01

Abstract

Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented.
2021
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/293221
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