In this paper, the design of a fully integrated DC-5 GHz NMOS single-pole double throw (SPDT) transmit/receive (T/R) switch for radio-frequency (RF) applications in a 0.25-μm SiGe BiCMOS/RFCMOS technology, is presented. The switch insertion loss is <1.4dB, the isolation is >30.1dB, all over the 0-5 GHz band, and the return loss is >19.9dB in the 0.8-1 GHz band and is >10.2dB in the 0-0.8 GHz and 1-5 GHz bands.
A DC-5 GHz NMOSFET SPDT T/R switch in 0.25-μm SiGe BiCMOS technology / Crippa, Paolo; Orcioni, Simone; Ricciardi, Francesco; Turchetti, Claudio. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 224:1-4(2004), pp. 434-438. [10.1016/j.apsusc.2003.09.020]
A DC-5 GHz NMOSFET SPDT T/R switch in 0.25-μm SiGe BiCMOS technology
CRIPPA, Paolo;ORCIONI, Simone;TURCHETTI, Claudio
2004-01-01
Abstract
In this paper, the design of a fully integrated DC-5 GHz NMOS single-pole double throw (SPDT) transmit/receive (T/R) switch for radio-frequency (RF) applications in a 0.25-μm SiGe BiCMOS/RFCMOS technology, is presented. The switch insertion loss is <1.4dB, the isolation is >30.1dB, all over the 0-5 GHz band, and the return loss is >19.9dB in the 0.8-1 GHz band and is >10.2dB in the 0-0.8 GHz and 1-5 GHz bands.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
