In this paper, the design of a fully integrated DC-5 GHz NMOS single-pole double throw (SPDT) transmit/receive (T/R) switch for radio-frequency (RF) applications in a 0.25-μm SiGe BiCMOS/RFCMOS technology, is presented. The switch insertion loss is <1.4dB, the isolation is >30.1dB, all over the 0-5 GHz band, and the return loss is >19.9dB in the 0.8-1 GHz band and is >10.2dB in the 0-0.8 GHz and 1-5 GHz bands.
A DC-5 GHz NMOSFET SPDT T/R switch in 0.25-μm SiGe BiCMOS technology
CRIPPA, Paolo;ORCIONI, Simone;TURCHETTI, Claudio
2004-01-01
Abstract
In this paper, the design of a fully integrated DC-5 GHz NMOS single-pole double throw (SPDT) transmit/receive (T/R) switch for radio-frequency (RF) applications in a 0.25-μm SiGe BiCMOS/RFCMOS technology, is presented. The switch insertion loss is <1.4dB, the isolation is >30.1dB, all over the 0-5 GHz band, and the return loss is >19.9dB in the 0.8-1 GHz band and is >10.2dB in the 0-0.8 GHz and 1-5 GHz bands.File in questo prodotto:
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