We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.

Self-consistent simulation of multi-walled CNT nanotransistors / Mencarelli, Davide; Pierantoni, Luca; DI DONATO, Andrea; Rozzi, Tullio. - In: INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES. - ISSN 1759-0787. - STAMPA. - Volume 2, Issue 05, 2010:(2010), pp. 453-456. [10.1017/S1759078710000656]

Self-consistent simulation of multi-walled CNT nanotransistors

MENCARELLI, Davide;PIERANTONI, Luca;DI DONATO, Andrea;ROZZI, TULLIO
2010-01-01

Abstract

We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/55511
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