This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting “a priori” fabrication process tolerances on ICs performances and in carrying out a combined “process-circuit” performances optimization.
An Efficient Method to Predict Drain Current Dispersion in MOS Transistors from Technological Parameters Fluctations
Conti M.;Orcioni S.;Turchetti C.;
1995-01-01
Abstract
This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting “a priori” fabrication process tolerances on ICs performances and in carrying out a combined “process-circuit” performances optimization.File in questo prodotto:
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