This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting “a priori” fabrication process tolerances on ICs performances and in carrying out a combined “process-circuit” performances optimization.
An Efficient Method to Predict Drain Current Dispersion in MOS Transistors from Technological Parameters Fluctations / Conti, M.; Orcioni, S.; Turchetti, C.; Bellutti, P. L.; Zen, M.; Zorzi, N.; Soncini, G.. - STAMPA. - (1995), pp. 209-214. (Intervento presentato al convegno 1995 IEEE International Conference on Microelectronic Test Structures (ICMTS 1995) tenutosi a Nara, Japan nel 22-25 Mar 1995) [10.1109/ICMTS.1995.513974].
An Efficient Method to Predict Drain Current Dispersion in MOS Transistors from Technological Parameters Fluctations
Conti M.;Orcioni S.;Turchetti C.;
1995-01-01
Abstract
This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting “a priori” fabrication process tolerances on ICs performances and in carrying out a combined “process-circuit” performances optimization.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
