This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Montecarlo analysis, while ensuring a good accuracy.
SiSMA: A statistical simulator for mismatch analysis of MOS ICs / Biagetti, Giorgio; Orcioni, Simone; Signoracci, L.; Turchetti, Claudio; Crippa, Paolo; Alessandrini, M.. - (2002), pp. 490-496. (Intervento presentato al convegno International Conference on Computer Aided Design (ICCAD 2002) tenutosi a San Jose, CA, U.S.A. nel 10 - 14 Novembre 2002) [10.1109/ICCAD.2002.1167577].
SiSMA: A statistical simulator for mismatch analysis of MOS ICs
BIAGETTI, Giorgio;ORCIONI, Simone;TURCHETTI, Claudio;CRIPPA, Paolo;M. ALESSANDRINI
2002-01-01
Abstract
This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Montecarlo analysis, while ensuring a good accuracy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
