This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Montecarlo analysis, while ensuring a good accuracy.
SiSMA: A statistical simulator for mismatch analysis of MOS ICs
BIAGETTI, Giorgio;ORCIONI, Simone;TURCHETTI, Claudio;CRIPPA, Paolo;M. ALESSANDRINI
2002-01-01
Abstract
This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Montecarlo analysis, while ensuring a good accuracy.File in questo prodotto:
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