Carbon nitride films deposited on Si (001 ) substrates at room temperature by XeCl laser ablation of graphite targets in low pressure (1, 5, 10 and 50 Pa) N2 atmosphere at fluence of 12 J/cm2 (∼0.4 GW/cm2) have been investigated by x-ray diffraction and transmission electron microscopy in order to study the structure of the films. The results showed that the samples are constituted of a continuous amorphous film inside which microcrystals of a coherently grown CNx phase are dispersed. This phase is monoclinic with the following lattice parameters: a=b=0.384 nm, c =0.302 nm, α=y=90°, and β=96.5°. The CNx phase grows with the (001) plane coincident with the (001) plane of the Si substrate and with the [010]CNx direction parallel to the [110]Si one.
Monoclinic carbon nitride phase coherently grown on Si(001) substrates / Barucca, Gianni; Majni, Giuseppe; Mengucci, Paolo; Leggieri, G.; Martino, M.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 89:6(2001), pp. 3494-3497. [10.1063/1.1347954]
Monoclinic carbon nitride phase coherently grown on Si(001) substrates
BARUCCA, Gianni;MAJNI, GIUSEPPE;MENGUCCI, Paolo;
2001-01-01
Abstract
Carbon nitride films deposited on Si (001 ) substrates at room temperature by XeCl laser ablation of graphite targets in low pressure (1, 5, 10 and 50 Pa) N2 atmosphere at fluence of 12 J/cm2 (∼0.4 GW/cm2) have been investigated by x-ray diffraction and transmission electron microscopy in order to study the structure of the films. The results showed that the samples are constituted of a continuous amorphous film inside which microcrystals of a coherently grown CNx phase are dispersed. This phase is monoclinic with the following lattice parameters: a=b=0.384 nm, c =0.302 nm, α=y=90°, and β=96.5°. The CNx phase grows with the (001) plane coincident with the (001) plane of the Si substrate and with the [010]CNx direction parallel to the [110]Si one.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
