Current monolithic-microwave integrated-circuit design, involving frequencies far in the millimeter and sub-millimeter ranges, is faced with the problem of the distributed nature of the devices. In this paper, we introduce a full-wave approach to the modeling of FETs under the small-signal hypothesis. The method is applied to MESFETs and pseudomorphic high electron-mobility transistors of different topologies and validated by comparison with available experimental data
Full Wave Modeling of Linear FETs for Millimeter Waves / Farina, Marco; Rozzi, Tullio. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - 49:(2001), pp. 1443-1450. [10.1109/22.939925]
Full Wave Modeling of Linear FETs for Millimeter Waves
FARINA, Marco;ROZZI, TULLIO
2001-01-01
Abstract
Current monolithic-microwave integrated-circuit design, involving frequencies far in the millimeter and sub-millimeter ranges, is faced with the problem of the distributed nature of the devices. In this paper, we introduce a full-wave approach to the modeling of FETs under the small-signal hypothesis. The method is applied to MESFETs and pseudomorphic high electron-mobility transistors of different topologies and validated by comparison with available experimental dataI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
