In this paper, we describe a three-dimensional (3D) electromagnetic (EM) approach to the modeling of active devices in their linear regime. The technique basically relies on the self-consistent introduction of distributed controlled current sources in the 3D EM simulation of passive components. The approach is validated by comparing measured and calculated results for a pseudomorphic high electron-mobility transistor in the millimeter-wave range. However, it may also be applied to a larger class of field-effect transistors, including MESFETs.
Electromagnetic 3-D model for active linear devices: application to pHEMTs in the linear regime / Farina, Marco; Pierantoni, Luca; Rozzi, Tullio. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - Vol.52 , Issue:2, Feb.2004:(2004), pp. 469-474. [10.1109/TMTT.2003.821919]
Electromagnetic 3-D model for active linear devices: application to pHEMTs in the linear regime
FARINA, Marco;PIERANTONI, Luca;ROZZI, TULLIO
2004-01-01
Abstract
In this paper, we describe a three-dimensional (3D) electromagnetic (EM) approach to the modeling of active devices in their linear regime. The technique basically relies on the self-consistent introduction of distributed controlled current sources in the 3D EM simulation of passive components. The approach is validated by comparing measured and calculated results for a pseudomorphic high electron-mobility transistor in the millimeter-wave range. However, it may also be applied to a larger class of field-effect transistors, including MESFETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
