In the present work, we report the results obtained by laser irradiation of a-Si/Co/SiO(2) and a-Si/SiO(2) samples in order to study the influence of the Co film on the a-Si crystallisation process. Both Co and a-Si layers were deposited by electron beam evaporation. Cobalt films of 0.5, 1 and 3 nm were deposited upon a 300 nm thick SiO(2) layer. The thickness of the a-Si layer was fixed at 200 nm. Samples were irradiated by a XeCl excimer laser under fluences of 0.40, 0.45 and 0.50 J cm(-2) and 1 or 10 number of pulses. Grazing incidence XRD and cross-sectional TEM were used for sample characterisation. Results showed the formation of CoSi(2) that, in general, considerably improves the crystallinity of the a-Si layer. In some cases, the presence of the CoSi(2) underlayer allowed the complete crystallisation of the a-Si layer even after the first laser pulse. Without CoSi(2), the same results were obtained only with a higher number of pulses.
Effects of cobalt thin films on the a-Si crystallisation induced by excimer laser irradiation / Mengucci, Paolo; Barucca, Gianni; D'Anna, E.; Jergel, M.; Luby, S.; Majkova, E.; Martino, M.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 138-139:(1999), pp. 145-149. [10.1016/S0169-4332(98)00528-5]
Effects of cobalt thin films on the a-Si crystallisation induced by excimer laser irradiation.
MENGUCCI, Paolo;BARUCCA, Gianni;
1999-01-01
Abstract
In the present work, we report the results obtained by laser irradiation of a-Si/Co/SiO(2) and a-Si/SiO(2) samples in order to study the influence of the Co film on the a-Si crystallisation process. Both Co and a-Si layers were deposited by electron beam evaporation. Cobalt films of 0.5, 1 and 3 nm were deposited upon a 300 nm thick SiO(2) layer. The thickness of the a-Si layer was fixed at 200 nm. Samples were irradiated by a XeCl excimer laser under fluences of 0.40, 0.45 and 0.50 J cm(-2) and 1 or 10 number of pulses. Grazing incidence XRD and cross-sectional TEM were used for sample characterisation. Results showed the formation of CoSi(2) that, in general, considerably improves the crystallinity of the a-Si layer. In some cases, the presence of the CoSi(2) underlayer allowed the complete crystallisation of the a-Si layer even after the first laser pulse. Without CoSi(2), the same results were obtained only with a higher number of pulses.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
