Carbon nitride films were deposited at room temperature on 〈111〉 Si substrates by XeCl laser ablation of graphite in low pressure (1-50 Pa) N2 atmosphere at a fluence of 12 J/cm2. N/C atomic ratios up to 0.5 were inferred from Rutherford backscattering measurements. Different diagnostic techniques (ARXPS, FTIR transmission spectroscopy, EDS, SEM and XRD) were used to characterize the deposited films. XRD spectra indicate a polycrystalline structure of the films. © 1997 Elsevier Science S.A.
Characterization of C-N thin films deposited by reactive excimer laser ablation of graphite targets in nitrogen atmosphere
BARUCCA, Gianni;MENGUCCI, Paolo;
1997-01-01
Abstract
Carbon nitride films were deposited at room temperature on 〈111〉 Si substrates by XeCl laser ablation of graphite in low pressure (1-50 Pa) N2 atmosphere at a fluence of 12 J/cm2. N/C atomic ratios up to 0.5 were inferred from Rutherford backscattering measurements. Different diagnostic techniques (ARXPS, FTIR transmission spectroscopy, EDS, SEM and XRD) were used to characterize the deposited films. XRD spectra indicate a polycrystalline structure of the films. © 1997 Elsevier Science S.A.File in questo prodotto:
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