A new model has been developed for the covariance matrix of device parameters. The analysis has been carried out starting from a general statistical model relating random variations of device parameters to the stochastic behavior of process parameters. The model predicts a dependence of correlation, between devices fabricated in the same die, on their dimensions and mutual distances so that mismatch can be derived as a particular case of equally designed devices.
Statistical modeling of MOS transistors / Conti, Massimo; Crippa, Paolo; Orcioni, Simone; Turchetti, Claudio. - (1998), pp. 92-95. (Intervento presentato al convegno 1998 3rd International Workshop on Statistical Metrology (IWSM) tenutosi a Honolulu, HI, U.S.A. nel 7 Giugno 1998) [10.1109/IWSTM.1998.729778].
Statistical modeling of MOS transistors
CONTI, MASSIMO;CRIPPA, Paolo;ORCIONI, Simone;TURCHETTI, Claudio
1998-01-01
Abstract
A new model has been developed for the covariance matrix of device parameters. The analysis has been carried out starting from a general statistical model relating random variations of device parameters to the stochastic behavior of process parameters. The model predicts a dependence of correlation, between devices fabricated in the same die, on their dimensions and mutual distances so that mismatch can be derived as a particular case of equally designed devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
