A new model has been developed for the covariance matrix of device parameters. The analysis has been carried out starting from a general statistical model relating random variations of device parameters to the stochastic behavior of process parameters. The model predicts a dependence of correlation, between devices fabricated in the same die, on their dimensions and mutual distances so that mismatch can be derived as a particular case of equally designed devices.

Statistical modeling of MOS transistors

CONTI, MASSIMO;CRIPPA, Paolo;ORCIONI, Simone;TURCHETTI, Claudio
1998-01-01

Abstract

A new model has been developed for the covariance matrix of device parameters. The analysis has been carried out starting from a general statistical model relating random variations of device parameters to the stochastic behavior of process parameters. The model predicts a dependence of correlation, between devices fabricated in the same die, on their dimensions and mutual distances so that mismatch can be derived as a particular case of equally designed devices.
1998
9780780343382
0-7803-4338-7
0-7803-4339-5
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/47086
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? ND
social impact