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EnglishA new model has been developed for the covariance matrix of device parameters. The analysis has been carried out starting from a general statistical model relating random variations of device parameters to the stochastic behavior of process parameters. The model predicts a dependence of correlation, between devices fabricated in the same die, on their dimensions and mutual distances so that mismatch can be derived as a particular case of equally designed devices.
| Titolo: | Statistical modeling of MOS transistors |
| Autori: | |
| Data di pubblicazione: | 1998 |
| Abstract: | A new model has been developed for the covariance matrix of device parameters. The analysis has been carried out starting from a general statistical model relating random variations of device parameters to the stochastic behavior of process parameters. The model predicts a dependence of correlation, between devices fabricated in the same die, on their dimensions and mutual distances so that mismatch can be derived as a particular case of equally designed devices. |
| Handle: | http://hdl.handle.net/11566/47086 |
| ISBN: | 9780780343382 0-7803-4338-7 0-7803-4339-5 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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