In this paper a model of MOS transistor mismatch based on autocorrelation function of the statistical parameters is proposed. Firstly a statistical model which maps the statistical behavior of technological parameters considered as a source of errors, into the behavior of device parameters, which depends on device geometry (area and layout) and mutual distances between devices, is derived. Then particular forms for the autocorrelation function are proposed so that expressions for the parameter mismatch variance can be obtained. The model has also been used to analyze mismatch effect on interdigitated and cross-coupled structures.

Statistical modeling of MOS transistor mismatch based on the parameters' autocorrelation function

CONTI, MASSIMO;CRIPPA, Paolo;ORCIONI, Simone;TURCHETTI, Claudio
1999

Abstract

In this paper a model of MOS transistor mismatch based on autocorrelation function of the statistical parameters is proposed. Firstly a statistical model which maps the statistical behavior of technological parameters considered as a source of errors, into the behavior of device parameters, which depends on device geometry (area and layout) and mutual distances between devices, is derived. Then particular forms for the autocorrelation function are proposed so that expressions for the parameter mismatch variance can be obtained. The model has also been used to analyze mismatch effect on interdigitated and cross-coupled structures.
9780780354715
0-7803-5471-0
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/47084
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 2
social impact