This paper describes a Low-Noise Amplifier (LNA), designed using a 0.25-μm SiGe process, operating in the 4.4-5 GHz band. A power gain of 12.8 dB at 5 GHz has been achieved with a power consumption of 23.77 mW using a 2 V power supply. The noise figure is 2.2 dB while the input referred 1dB compression point is -6.2 dBm.
Design of a 4.4 to 5 GHz LNA in 0.25-um SiGe BiCMOS technology / Crippa, Paolo; Orcioni, Simone; Ricciardi, F; Turchetti, Claudio. - 1:(2003), pp. 333-336. (Intervento presentato al convegno 2003 International Symposium on Circuits and Systems (ISCAS '03) tenutosi a Bangkok, Tailandia nel 25 - 28 Maggio 2003) [10.1109/ISCAS.2003.1205568].
Design of a 4.4 to 5 GHz LNA in 0.25-um SiGe BiCMOS technology
CRIPPA, Paolo;ORCIONI, Simone;TURCHETTI, Claudio
2003-01-01
Abstract
This paper describes a Low-Noise Amplifier (LNA), designed using a 0.25-μm SiGe process, operating in the 4.4-5 GHz band. A power gain of 12.8 dB at 5 GHz has been achieved with a power consumption of 23.77 mW using a 2 V power supply. The noise figure is 2.2 dB while the input referred 1dB compression point is -6.2 dBm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
