A study has been carried out on the morphology and structure of three-dimensional (3D) SiGe islands grown by molecular beam epitaxy (MBE) on Si(100) substrates. Samples of Si1-xGex alloys have been prepared to investigate the effects either of the alloy composition or of the growth temperature. Atomic force microscopy (AFM) evidenced the growth of 3D islands and transmission electron microscopy (TEM) demonstrated netting layer growth on Si(100), independently on the deposition conditions. Energy dispersive spectroscopy (EDS) microanalyses carried out on cross-sections of large Si1-xGex islands with defects allowed a measurement of the Ge distribution in the islands. To the best of our knowledge, these have been the first experimental evidences of a composition change inside SiGe islands. The interpretation of the experimental results has been done in terms of strain-enhanced diffusion mechanisms both of the growing species (Si and Ge) and of small islands.
Strain-driven morphology of Si1-xGex islands grown on Si (100) / N., Pinto; R., Murri; R., Rinaldi; Barucca, Gianni. - In: MICRON. - ISSN 0968-4328. - 31:(2000), pp. 315-321. [10.1016/S0968-4328(99)00099-2]