We report on the structural, optical and electrical properties of undoped microcrystalline silicon films deposited by ECR-CVD technique. In detail, films with a crystallinity fraction larger than 60%, optical absorption spectra close to those of monocrystalline silicon, deposition rate higher than 1 angstrom/s and electron mobility of approximately 50 cm2/V s have been obtained at substrate temperatures ranging from 200 to 300 °C.
Large area microcrystalline silicon films grown by ECR-CVD / S., Ferrero; P., Mandracci; G., Cicero; F., Giorgis; C. F., Pirri; Barucca, Gianni. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 383:1-2(2001), pp. 181-184. [10.1016/S0040-6090(00)01630-8]
Large area microcrystalline silicon films grown by ECR-CVD
BARUCCA, Gianni
2001-01-01
Abstract
We report on the structural, optical and electrical properties of undoped microcrystalline silicon films deposited by ECR-CVD technique. In detail, films with a crystallinity fraction larger than 60%, optical absorption spectra close to those of monocrystalline silicon, deposition rate higher than 1 angstrom/s and electron mobility of approximately 50 cm2/V s have been obtained at substrate temperatures ranging from 200 to 300 °C.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
