Large area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers. The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Å were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure.
Optical and structural properties of SiC layers grown by Electron Cyclotron Resonance CVD technique / F., Giorgis; A., Chiodoni; G., Cicero; S., Ferrero; P., Mandracci; Barucca, Gianni; R., Reitano; P., Musumeci; L., Calcagno; G., Foti. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - 10:3-7(2001), pp. 1264-1267. [10.1016/S0925-9635(00)00528-8]
Optical and structural properties of SiC layers grown by Electron Cyclotron Resonance CVD technique.
BARUCCA, Gianni;
2001-01-01
Abstract
Large area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers. The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Å were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
