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EnglishLarge area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers. The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Å were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure.
| Titolo: | Optical and structural properties of SiC layers grown by Electron Cyclotron Resonance CVD technique. | |
| Autori: | ||
| Data di pubblicazione: | 2001 | |
| Rivista: | ||
| Abstract: | Large area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers. The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Å were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure. | |
| Handle: | http://hdl.handle.net/11566/39920 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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