CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishLarge area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers. The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Å were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure.
| Titolo: | Optical and structural properties of SiC layers grown by Electron Cyclotron Resonance CVD technique. |
| Autori: | |
| Data di pubblicazione: | 2001 |
| Rivista: | |
| Abstract: | Large area microcrystalline and polycrystalline SiC thin films have been grown by electron cyclotron resonance CVD over (100) silicon wafers. The samples have been characterized by X-ray diffractometry (XRD), transmission electron microscopy (TEM), micro-Raman and photo luminescence spectroscopy. Stoichiometric SiC films containing 3C-SiC crystals with orientation close to that of Si substrate and lateral grain dimension up to 1400 Å were obtained under suitable deposition conditions. They also exhibit blue photoluminescence at room temperature in the range of 400-450 nm with features dependent on their structure. |
| Handle: | http://hdl.handle.net/11566/39920 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11566/39920
Copyright © 2020