The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900cm2/Vs at room temperature and 8.2 × 104cm2/Vs at 4.2 K were obtained.
Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases / L., DI GASPARE; K., Alfaramawi; F., Evangelisti; E., Palange; Barucca, Gianni; G., Majni. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 79:13(2001), pp. 2031-2033. [10.1063/1.1400769]
Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases.
BARUCCA, Gianni;
2001-01-01
Abstract
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900cm2/Vs at room temperature and 8.2 × 104cm2/Vs at 4.2 K were obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
