In this work we mainly report on the analysis of polycrystalline 3C-SiC films grown by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) on 4in. (100) and (111) c-Si wafers, using a H2 + SiH4 + CH4 gas mixture at substrate temperatures in the range 930-1050°C. Structural properties of the films were analyzed by X-ray diffractometry, micro-Raman spectroscopy and transmission electron microscopy, while the elemental composition was determined by Rutherford backscattering (RBS) technique. Micro-Raman measurements performed on the SiC layers show a peak around 796cm-1 due to transversal optical phonons of the crystalline SiC matrix, while neither carbon clusterization in graphitic phase nor Si clusterization in amorphous phase was observed. TEM analyses show a polycrystalline columnar structure with lateral crystal dimensions ranging from 300 up to 1400Å. The crystals orientation is very close to that of (100) and (111) Si substrates, as revealed by X-ray and electron diffraction.
Hetero-epitaxy of 3C-SiC by Electron Cyclotron Resonance-CVD technique / P., Mandracci; A., Chiodoni; G., Cicero; S., Ferrero; F., Giorgis; C. F., Pirri; Barucca, Gianni; L., Calcagno; G., Foti; P., Musumeci; R., Reitano. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 184:1-4(2001), pp. 43-49. [10.1016/S0169-4332(01)00474-3]
Hetero-epitaxy of 3C-SiC by Electron Cyclotron Resonance-CVD technique.
BARUCCA, Gianni;
2001-01-01
Abstract
In this work we mainly report on the analysis of polycrystalline 3C-SiC films grown by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) on 4in. (100) and (111) c-Si wafers, using a H2 + SiH4 + CH4 gas mixture at substrate temperatures in the range 930-1050°C. Structural properties of the films were analyzed by X-ray diffractometry, micro-Raman spectroscopy and transmission electron microscopy, while the elemental composition was determined by Rutherford backscattering (RBS) technique. Micro-Raman measurements performed on the SiC layers show a peak around 796cm-1 due to transversal optical phonons of the crystalline SiC matrix, while neither carbon clusterization in graphitic phase nor Si clusterization in amorphous phase was observed. TEM analyses show a polycrystalline columnar structure with lateral crystal dimensions ranging from 300 up to 1400Å. The crystals orientation is very close to that of (100) and (111) Si substrates, as revealed by X-ray and electron diffraction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
