The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator (SOI) substrates is demonstrated. The structural and electrical properties of the samples are comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2800 cm2 V-1 s-1 at room temperature and 8.2×104 cm2 V-1 s-1 at 4 K are obtained.
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates / L., DI GASPARE; G., Scappucci; E., Palange; K., Alfaramawi; F., Evangelisti; Barucca, Gianni; G., Majni. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - 89:1-3(2002), pp. 346-349. [10.1016/S0921-5107(01)00768-1]
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates
BARUCCA, Gianni;
2002-01-01
Abstract
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator (SOI) substrates is demonstrated. The structural and electrical properties of the samples are comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2800 cm2 V-1 s-1 at room temperature and 8.2×104 cm2 V-1 s-1 at 4 K are obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
