All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry-Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs.

New insights on amorphous silicon-nitride microcavities / V., Ballarini; Barucca, Gianni; E., Bennici; C. F., Pirri; C., Ricciardi; E., Tresso; F., Giorgis. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - 16:3-4(2003), pp. 591-595. [10.1016/S1386-9477(02)00651-3]

New insights on amorphous silicon-nitride microcavities

BARUCCA, Gianni;
2003-01-01

Abstract

All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry-Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs.
2003
Amorphous Silicon based alloys, Multilayers, Optical properties, Photoluminescence
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/39695
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