Large area (up to 4 inch) polycrystalline 3C-SiC films have been deposited by electron cyclotron resonance chemical vapor deposition technique. Crystalline and non-crystalline substrates such as (1 0 0) Si wafers, thermally oxidized Si wafers and Al2O3 ceramic sheets have been used, maintaining the same deposition conditions. The structural and morphological properties of the films were analyzed by means of transmission electron microscopy and X-ray diffractometry, while surface morphology was characterized by atomic force microscopy. Preliminary results on technological processes for the realization of polycrystalline SiC based micro-electro-mechanical systems are reported.
Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems / C., Ricciardi; E., Bennici; M., Cocuzza; P., Mandracci; D., Bich; V., Guglielmetti; Barucca, Gianni. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 427:1-2(2003), pp. 187-190. [10.1016/S0040-6090(02)01222-1]
Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems.
BARUCCA, Gianni
2003-01-01
Abstract
Large area (up to 4 inch) polycrystalline 3C-SiC films have been deposited by electron cyclotron resonance chemical vapor deposition technique. Crystalline and non-crystalline substrates such as (1 0 0) Si wafers, thermally oxidized Si wafers and Al2O3 ceramic sheets have been used, maintaining the same deposition conditions. The structural and morphological properties of the films were analyzed by means of transmission electron microscopy and X-ray diffractometry, while surface morphology was characterized by atomic force microscopy. Preliminary results on technological processes for the realization of polycrystalline SiC based micro-electro-mechanical systems are reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
