Polycrystalline 3C-SiC thin films grown by LPCVD on different substrates were characterized by vibrational and electronic spectroscopies and electron diffraction measurements aimed at studying the samples microstructure. Raman spectra evidence the coexistence of crystallites, whose size distribution depends on the deposition conditions, and of a disordered matrix. On the other side, IR reflectivity measurements show spectra which are strongly influenced by the surface morphology.
Microstructure analysis on polycrystalline 3C–SiC thin films / C., Ricciardi; F., Giorgis; G., Fanchini; S., Musso; V., Ballarini; E., Bennici; Barucca, Gianni; A. M., Rossi. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - 14:3-7(2005), pp. 1134-1137. [10.1016/j.diamond.2005.01.029]
Microstructure analysis on polycrystalline 3C–SiC thin films.
BARUCCA, Gianni;
2005-01-01
Abstract
Polycrystalline 3C-SiC thin films grown by LPCVD on different substrates were characterized by vibrational and electronic spectroscopies and electron diffraction measurements aimed at studying the samples microstructure. Raman spectra evidence the coexistence of crystallites, whose size distribution depends on the deposition conditions, and of a disordered matrix. On the other side, IR reflectivity measurements show spectra which are strongly influenced by the surface morphology.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.