Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)-based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p-type conduction and hysteresis in the transfer characteristics that enable their use as nonvolatile memories. The differences between Ni and NiCr contacts are investigated and the Y-function method is applied to extract the channel mobility up to 112 cm2 V−1 s−1 and the contact resistances. Ni contacts present specific contact resistance of 6.3 k Ω μm that increases to 18.1 k Ω μm for NiCr. These findings are important for the technological exploitation of multilayer BP in a new class of electronic and optoelectronic devices.
Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts / Viscardi, L.; Intonti, K.; Kumar, A.; Faella, E.; Pelella, A.; Giubileo, F.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.. - In: PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - ISSN 0370-1972. - 260:9(2023). [10.1002/pssb.202200537]
Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts
Kumar A.;
2023-01-01
Abstract
Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)-based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p-type conduction and hysteresis in the transfer characteristics that enable their use as nonvolatile memories. The differences between Ni and NiCr contacts are investigated and the Y-function method is applied to extract the channel mobility up to 112 cm2 V−1 s−1 and the contact resistances. Ni contacts present specific contact resistance of 6.3 k Ω μm that increases to 18.1 k Ω μm for NiCr. These findings are important for the technological exploitation of multilayer BP in a new class of electronic and optoelectronic devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
