Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts

Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)-based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p-type conduction and hysteresis in the transfer characteristics that enable their use as nonvolatile memories. The differences between Ni and NiCr contacts are investigated and the Y-function method is applied to extract the channel mobility up to 112 cm2 V−1 s−1 and the contact resistances. Ni contacts present specific contact resistance of 6.3 k Ω μm that increases to 18.1 k Ω μm for NiCr. These findings are important for the technological exploitation of multilayer BP in a new class of electronic and optoelectronic devices.