We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V−1s−1 at 150 K and reduces to 33 cm2V−1s−1 at 340 K, when the voltage gate sweep range is ± 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.
Temperature dependent black phosphorus transistor and memory / Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.. - In: NANO EXPRESS. - ISSN 2632-959X. - 4:1(2023). [10.1088/2632-959X/acbe11]
Temperature dependent black phosphorus transistor and memory
Kumar A.Primo
;
2023-01-01
Abstract
We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V−1s−1 at 150 K and reduces to 33 cm2V−1s−1 at 340 K, when the voltage gate sweep range is ± 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
