Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility mu (p) approximate to 1.4 cm(2)V(-1)s(-1) and a subthreshold swing SS approximate to 10 V dec(-1). Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R approximate to 10 mAW(-1) at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.
WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications / Pelella, Aniello; Kumar, Arun; Intonti, Kimberly; Durante, Ofelia; De Stefano, Sebastiano; Han, Xinyi; Li, Zhonggui; Guo, Yao; Giubileo, Filippo; Camilli, Luca; Passacantando, Maurizio; Zak, Alla; Di Bartolomeo, Antonio. - In: SMALL. - ISSN 1613-6829. - (2024). [Epub ahead of print] [10.1002/smll.202403965]
WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications
Arun Kumar;
2024-01-01
Abstract
Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility mu (p) approximate to 1.4 cm(2)V(-1)s(-1) and a subthreshold swing SS approximate to 10 V dec(-1). Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R approximate to 10 mAW(-1) at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.File | Dimensione | Formato | |
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