Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility mu (p) approximate to 1.4 cm(2)V(-1)s(-1) and a subthreshold swing SS approximate to 10 V dec(-1). Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R approximate to 10 mAW(-1) at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications / Pelella, Aniello; Kumar, Arun; Intonti, Kimberly; Durante, Ofelia; De Stefano, Sebastiano; Han, Xinyi; Li, Zhonggui; Guo, Yao; Giubileo, Filippo; Camilli, Luca; Passacantando, Maurizio; Zak, Alla; Di Bartolomeo, Antonio. - In: SMALL. - ISSN 1613-6829. - (2024). [Epub ahead of print] [10.1002/smll.202403965]

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications

Arun Kumar;
2024-01-01

Abstract

Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility mu (p) approximate to 1.4 cm(2)V(-1)s(-1) and a subthreshold swing SS approximate to 10 V dec(-1). Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R approximate to 10 mAW(-1) at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.
2024
File in questo prodotto:
File Dimensione Formato  
Pelella_WS2-Nanotube-Transistor -Photodetection-Optoelectronic_2024.pdf

Solo gestori archivio

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza d'uso: Tutti i diritti riservati
Dimensione 2.66 MB
Formato Adobe PDF
2.66 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/335732
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 1
social impact