Design and modeling of geometric diodes can be really challenging as it requires a rigorous quantum analysis at the nanoscale, accurate enough to capture the asymmetric behavior of charge transport. In this paper, we present a full-wave Time-Dependent Schrödinger Equation (TDSE) approach to model coherent transport in a two-dimensional geometric diode defined by an asymmetric taper of the domain where the charges are confined. The proposed solution clearly shows asymmetric transport, and provides a description of the rectification behavior in response to a parametric change. In general, the above model can account for even more complex geometries in order to optimize diodes performance.
A full-wave time-dependent Schrödinger equation approach for the modeling of asymmetric transport in geometric diodes / Zampa, G. M.; Mencarelli, D.; Pierantoni, L.. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - ELETTRONICO. - 661:(2023), p. 414917. [10.1016/j.physb.2023.414917]