In this work a W coating was deposited through PS in Ar-H2 atmosphere on a substrate of CuCrZr with an interlayer consisting of gradually changing fractions of Cu and W. The W coating and the interlayer showed good adhesion and no cracks were observed. The hardness of W and Cu along the interlayer was determined by nano-indentation tests and the results showed that a hardness gradient does exist in both the metals. Microstructural examinations suggest that the hardness gradient depends on the texture, which exhibits significant differences along the interlayer: multiplication and movement of dislocations, and localized plasticity under the indenting tip are strongly affected by grain orientation.

Grain Orientation and Hardness in the Graded Interlayer of Plasma Sprayed W on CuCrZr / Cabibbo, Marcello; Fava, Alessandra; Montanari, Roberto; Pakhomova, Ekaterina; Paoletti, Chiara; Richetta, Maria; Varone, Alessandra. - In: APPLIED SCIENCES. - ISSN 2076-3417. - ELETTRONICO. - 12:4(2022). [10.3390/app12041822]

Grain Orientation and Hardness in the Graded Interlayer of Plasma Sprayed W on CuCrZr

Marcello Cabibbo
Writing – Review & Editing
;
Chiara Paoletti
Investigation
;
2022-01-01

Abstract

In this work a W coating was deposited through PS in Ar-H2 atmosphere on a substrate of CuCrZr with an interlayer consisting of gradually changing fractions of Cu and W. The W coating and the interlayer showed good adhesion and no cracks were observed. The hardness of W and Cu along the interlayer was determined by nano-indentation tests and the results showed that a hardness gradient does exist in both the metals. Microstructural examinations suggest that the hardness gradient depends on the texture, which exhibits significant differences along the interlayer: multiplication and movement of dislocations, and localized plasticity under the indenting tip are strongly affected by grain orientation.
2022
Coatings; CuCrZr; Functional graded materials; Nano-indentation; Plasma facing materials; Tungsten; X-ray diffraction.
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Descrizione: Appl. Sci. 2022 12(4) 1822
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/300890
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