Although the scanning microwave microscope (SMM) is based on the atomic force microscope (AFM), the SMM differs from the AFM by being able to sense subsurface electromagnetic properties of a sample. This makes the SMM promising for in-depth nondestructive characterization of nanoelectronic structures. However, the SMM raw data are convoluted with the sample topography, making it especially challenging for quantitative characterization of nonplanar structures. In this paper, using the topography information simultaneously obtained by the AFM and the in situ extracted probe geometry, we de-embed from the topography-corrupted SMM data the sheet resistance of 2D electron or hole gas (2DEG or 2DHG) buried at the interface of an AlN/GaN heterostructure, including the lateral depletion of the 2DEG from an etched step. The SMM results are validated by Hall-effect measurements. The limitation and possible improvement in the present technique are discussed. With improved setup, the SMM can be used to nondestructively monitor the local sheet resistance of 2DEG or 2DHG during device manufacture. These studies help to pave the way to 3D microwave tomography on the nanometer scale.

Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures / Wang, X.; Fabi, G.; Chaudhuri, R.; Hickman, A.; Asadi, M. J.; Nomoto, K.; Xing, H. G.; Jena, D.; Farina, M.; Hwang, J. C. M.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 120:1(2022). [10.1063/5.0072358]

Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures

Farina M.;
2022-01-01

Abstract

Although the scanning microwave microscope (SMM) is based on the atomic force microscope (AFM), the SMM differs from the AFM by being able to sense subsurface electromagnetic properties of a sample. This makes the SMM promising for in-depth nondestructive characterization of nanoelectronic structures. However, the SMM raw data are convoluted with the sample topography, making it especially challenging for quantitative characterization of nonplanar structures. In this paper, using the topography information simultaneously obtained by the AFM and the in situ extracted probe geometry, we de-embed from the topography-corrupted SMM data the sheet resistance of 2D electron or hole gas (2DEG or 2DHG) buried at the interface of an AlN/GaN heterostructure, including the lateral depletion of the 2DEG from an etched step. The SMM results are validated by Hall-effect measurements. The limitation and possible improvement in the present technique are discussed. With improved setup, the SMM can be used to nondestructively monitor the local sheet resistance of 2DEG or 2DHG during device manufacture. These studies help to pave the way to 3D microwave tomography on the nanometer scale.
2022
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Descrizione: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Xiaopeng Wang, Gianluca Fabi, Reet Chaudhuri, Austin Hickman, Mohammad Javad Asadi, Kazuki Nomoto, Huili Grace Xing, Debdeep Jena, Marco Farina, James C. M. Hwang; Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures. Appl. Phys. Lett. 3 January 2022; 120 (1): 012103 and may be found at https://doi.org/10.1063/5.0072358
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/295341
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