Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3–10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.
Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector / Dragoman, M.; Aldrigo, M.; Dragoman, D.; Povey, I. M.; Iordanescu, S.; Dinescu, A.; Di Donato, A.; Modreanu, M.. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 126:(2021), p. 114451. [10.1016/j.physe.2020.114451]
Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector
Di Donato A.;
2021-01-01
Abstract
Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3–10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
