Fifty years ago, when the Università Politecnica delle Marche (UnivPM) was founded, the minimum size of an electron device was about ten micrometers, today dimensions in the order of twenty nanometers can be reached by the current technologies. At that time silicon foundries were able to integrate about tens of components on a chip, after fifty years has passed, an integrated circuit (IC)might contain more than ten billion devices. As the need for increasing integrated density on chips continues and silicon technologies show their physical limits, the new era of nanotechnologies, that have the potentiality for circumventing these limits, is coming. The aim of this paper is to highlight some key aspects that determined this rapid advancement and to discuss the contributions given by UnivPM both in microelectronics and nanoelectronics during these five decades. In particular, in the context of microelectronics the paper focuses on research activity in the fields of device modeling, tolerance analysis, statistical analysis of ICs, statistical simulation and design of ICs. With regard to nanoelectronics, the recently discovered nanosize materials, such as atomic clusters, nanotubes/nanowires, and monoatomic layers, may constitute a newscalable platform for RF electronics, namely for switches, amplifiers, logic devices, frequency multipliers, rectifies, interconnects, and sensors. In this framework, the present contribution provides a view on the most recent developments in modelling and simulation of carbon based devices. Specifically, we describe rigorous multi-physics approaches for the analysis of quantum transport and electromagnetic fields in nanostructured materials. In addition, we show that the low profile and size of nanomaterials make them perfect candidates as test beds for novel experiments on single electron devices and quantum transistors. Finally, the paper will give a brief excursus of the activity in progress at UnivPM, taking a look at the future development in electronics.
From Microelectronics to Nanoelectronics: Fifty Years of Advancements in Electronics / Biagetti, Giorgio; Conti, Massimo; Crippa, Paolo; Mencarelli, Davide; Turchetti, Claudio. - ELETTRONICO. - (2019), pp. 1-22. [10.1007/978-3-030-32762-0_1]
From Microelectronics to Nanoelectronics: Fifty Years of Advancements in Electronics
Biagetti, Giorgio;Conti, Massimo;Crippa, Paolo
;Mencarelli, Davide;Turchetti, Claudio
2019-01-01
Abstract
Fifty years ago, when the Università Politecnica delle Marche (UnivPM) was founded, the minimum size of an electron device was about ten micrometers, today dimensions in the order of twenty nanometers can be reached by the current technologies. At that time silicon foundries were able to integrate about tens of components on a chip, after fifty years has passed, an integrated circuit (IC)might contain more than ten billion devices. As the need for increasing integrated density on chips continues and silicon technologies show their physical limits, the new era of nanotechnologies, that have the potentiality for circumventing these limits, is coming. The aim of this paper is to highlight some key aspects that determined this rapid advancement and to discuss the contributions given by UnivPM both in microelectronics and nanoelectronics during these five decades. In particular, in the context of microelectronics the paper focuses on research activity in the fields of device modeling, tolerance analysis, statistical analysis of ICs, statistical simulation and design of ICs. With regard to nanoelectronics, the recently discovered nanosize materials, such as atomic clusters, nanotubes/nanowires, and monoatomic layers, may constitute a newscalable platform for RF electronics, namely for switches, amplifiers, logic devices, frequency multipliers, rectifies, interconnects, and sensors. In this framework, the present contribution provides a view on the most recent developments in modelling and simulation of carbon based devices. Specifically, we describe rigorous multi-physics approaches for the analysis of quantum transport and electromagnetic fields in nanostructured materials. In addition, we show that the low profile and size of nanomaterials make them perfect candidates as test beds for novel experiments on single electron devices and quantum transistors. Finally, the paper will give a brief excursus of the activity in progress at UnivPM, taking a look at the future development in electronics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.