In this work, three-terminal ballistic junctions, made of three-branch graphene nanoribbons (GNRs), are considered and simulated at the nanometric scale. The analysis is carried out by a scattering matrix approach, in a discrete formulation optimized for GNR devices. The ballisticity and the scattering properties of the junction contribute to the nonlinear behaviour, as, in fact, a sinusoidal voltage between two GNR branches results in a non-sinusoidal current at the third branch. The inputoutput characteristic is hardly predictable at the nanoscale, as it depends on several cooperating factors, namely the potential distribution and the geometry of the junction. Several numerical examples are shown to illustrate the above concepts
Nanoscale Simulation of Three-contact Graphene Ballistic Junctions / Mencarelli, Davide; Pierantoni, Luca; Rozzi, Tullio; Coccetti, Fabio. - In: NANOMATERIALS AND NANOTECHNOLOGY. - ISSN 1847-9804. - ELETTRONICO. - 4:1(2014), pp. 1-5. [10.5772/58547]
Nanoscale Simulation of Three-contact Graphene Ballistic Junctions
MENCARELLI, Davide;PIERANTONI, Luca;
2014-01-01
Abstract
In this work, three-terminal ballistic junctions, made of three-branch graphene nanoribbons (GNRs), are considered and simulated at the nanometric scale. The analysis is carried out by a scattering matrix approach, in a discrete formulation optimized for GNR devices. The ballisticity and the scattering properties of the junction contribute to the nonlinear behaviour, as, in fact, a sinusoidal voltage between two GNR branches results in a non-sinusoidal current at the third branch. The inputoutput characteristic is hardly predictable at the nanoscale, as it depends on several cooperating factors, namely the potential distribution and the geometry of the junction. Several numerical examples are shown to illustrate the above conceptsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.