We report on the self-consistent analysis of armchair graphene nanoribbon (GNR) field-effect transistors (FET), in the case of multi-band coherent carrier transport. In principle, the same approach can be extended to include the contribution to charge transport due to different layers of a few-layer GNR-FET. To the aim of demonstrating the versatility of our simulation tool, we provide interesting examples about the dependence of charge and self-consistent potential on the gate voltage, for small drain voltages: these include details of numerical convergence of the iterative system of Poisson and Schrödinger equation
Self-consistent simulation of local potential in external-gate biased graphene nanoribbons / Mencarelli, Davide; Rozzi, Tullio; Pierantoni, Luca; Coccetti, F.. - ELETTRONICO. - (2011), pp. 1-4. (Intervento presentato al convegno General Assembly and Scientific Symposium, 2011 XXXth URSI tenutosi a Istanbul (Turkey) nel 13-20 Aug. 2011) [10.1109/URSIGASS.2011.6050628].