In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.
Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors / Farina, Marco; Rozzi, Tullio. - (2003), pp. 53-56. (Intervento presentato al convegno 11th GAAS Symposium (jointly with 33rd European Microwave Conference 2003) tenutosi a Munich (Germany) nel Settembre).
Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors
FARINA, Marco;ROZZI, TULLIO
2003-01-01
Abstract
In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.File in questo prodotto:
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