In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.

Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors

FARINA, Marco;ROZZI, TULLIO
2003

Abstract

In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.
9781580538367
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11566/47916
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