In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.
Titolo: | Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors |
Autori: | |
Data di pubblicazione: | 2003 |
Abstract: | In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range. |
Handle: | http://hdl.handle.net/11566/47916 |
ISBN: | 9781580538367 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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