We have developed a rigorous full-wave analysis technique for T-gate unbiased TW-FETs. By virtue of its analytical nature, the method is particularly suited to CAD applications. We have studied MMIC microstrips and other complex passive structures such as standard and T-gate TW-FET's, devoting particular attention to the distribution of current inside the metallization and to the anomalous behaviour of eeff with frequency. All structures considered were simulated by means of a desktop computer and results are compared with existing numerical and experimental data.
Full-Wave Analysis of Millimetric MMIC and unbiased TW-FET / Farina, Marco; Gerini, G.; Rozzi, Tullio. - (1994). (Intervento presentato al convegno Progress in Electromagnetics Research Symposium tenutosi a Noordwijk nel 11-15 Luglio 1994).
Full-Wave Analysis of Millimetric MMIC and unbiased TW-FET
FARINA, Marco;ROZZI, TULLIO
1994-01-01
Abstract
We have developed a rigorous full-wave analysis technique for T-gate unbiased TW-FETs. By virtue of its analytical nature, the method is particularly suited to CAD applications. We have studied MMIC microstrips and other complex passive structures such as standard and T-gate TW-FET's, devoting particular attention to the distribution of current inside the metallization and to the anomalous behaviour of eeff with frequency. All structures considered were simulated by means of a desktop computer and results are compared with existing numerical and experimental data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
