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EnglishWe have developed a rigorous full-wave analysis technique for T-gate unbiased TW-FETs. By virtue of its analytical nature, the method is particularly suited to CAD applications. We have studied MMIC microstrips and other complex passive structures such as standard and T-gate TW-FET's, devoting particular attention to the distribution of current inside the metallization and to the anomalous behaviour of eeff with frequency. All structures considered were simulated by means of a desktop computer and results are compared with existing numerical and experimental data.
| Titolo: | Full-Wave Analysis of Millimetric MMIC and unbiased TW-FET | |
| Autori: | ||
| Data di pubblicazione: | 1994 | |
| Abstract: | We have developed a rigorous full-wave analysis technique for T-gate unbiased TW-FETs. By virtue of its analytical nature, the method is particularly suited to CAD applications. We have studied MMIC microstrips and other complex passive structures such as standard and T-gate TW-FET's, devoting particular attention to the distribution of current inside the metallization and to the anomalous behaviour of eeff with frequency. All structures considered were simulated by means of a desktop computer and results are compared with existing numerical and experimental data. | |
| Handle: | http://hdl.handle.net/11566/46960 | |
| ISBN: | 9780792330196 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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