We have developed a rigorous full-wave analysis technique for T-gate unbiased TW-FETs. By virtue of its analytical nature, the method is particularly suited to CAD applications. We have studied MMIC microstrips and other complex passive structures such as standard and T-gate TW-FET's, devoting particular attention to the distribution of current inside the metallization and to the anomalous behaviour of eeff with frequency. All structures considered were simulated by means of a desktop computer and results are compared with existing numerical and experimental data.
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