In order to evaluate the propagation characteristics of distributed FET's we have developed a rigorous and efficient field analysis technique, that is particularly suited for CAD applications to lossy planar circuits with finite metallization. This approach allowed us to compute the accurate dispersion curves of a totally asymmetric three-conductor structure with finite electrode thickness, metallic and dielectric losses by means of a desktop computer.
Efficient Characterization of Millimetric TW FET's with finite metallization / Rozzi, Tullio; Gerini, G.; Farina, Marco. - (1993), pp. 708-709. (Intervento presentato al convegno 23rd European Microwave Conference tenutosi a Madrid (Spain) nel 6-10 settembre 1993) [10.1109/EUMA.1993.336679].
Efficient Characterization of Millimetric TW FET's with finite metallization
ROZZI, TULLIO;FARINA, Marco
1993-01-01
Abstract
In order to evaluate the propagation characteristics of distributed FET's we have developed a rigorous and efficient field analysis technique, that is particularly suited for CAD applications to lossy planar circuits with finite metallization. This approach allowed us to compute the accurate dispersion curves of a totally asymmetric three-conductor structure with finite electrode thickness, metallic and dielectric losses by means of a desktop computer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
