In order to evaluate the propagation characteristics of distributed FET's we have developed a rigorous and efficient field analysis technique, that is particularly suited for CAD applications to lossy planar circuits with finite metallization. This approach allowed us to compute the accurate dispersion curves of a totally asymmetric three-conductor structure with finite electrode thickness, metallic and dielectric losses by means of a desktop computer.

Efficient Characterization of Millimetric TW FET's with finite metallization

ROZZI, TULLIO;FARINA, Marco
1993

Abstract

In order to evaluate the propagation characteristics of distributed FET's we have developed a rigorous and efficient field analysis technique, that is particularly suited for CAD applications to lossy planar circuits with finite metallization. This approach allowed us to compute the accurate dispersion curves of a totally asymmetric three-conductor structure with finite electrode thickness, metallic and dielectric losses by means of a desktop computer.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/46647
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