We present an accurate e.m. model of T-Gate TW-FET's and necessary conditions for obtaining exponentially growing waves. This model takes into detailed account device geometry, the effect of carrier velocity saturation in the high field region, conductor and dielectric losses and small signal channel current
Field Analysis and Design Criteria for T-Gate TW-FET's with Positive Gain / Farina, Marco; Pierantoni, Luca; Rozzi, Tullio. - 3:(1995), pp. 1269-1272. (Intervento presentato al convegno International Microwave Symposium tenutosi a Orlando (FL) USA nel 16-20 may 1995).
Field Analysis and Design Criteria for T-Gate TW-FET's with Positive Gain
FARINA, Marco;PIERANTONI, Luca;ROZZI, TULLIO
1995-01-01
Abstract
We present an accurate e.m. model of T-Gate TW-FET's and necessary conditions for obtaining exponentially growing waves. This model takes into detailed account device geometry, the effect of carrier velocity saturation in the high field region, conductor and dielectric losses and small signal channel currentFile in questo prodotto:
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