Considering a standard InGaAs-AIGaAs PM HEMT, we report an accurate theoretical e.m. characterisation of propagation phenomena arising in this structure performed by means of a full-wave model. Some discussion of the carrier transport phenomena is also provided.
Electromagnetic Investigation of Travelling Wave Operation in AlGaAs-InGaAs Pseudomorphic HEMT's / Farina, Marco; Pierantoni, Luca; Rozzi, Tullio. - 1:(1995), pp. 217-221. (Intervento presentato al convegno 25th European Microwave Conference tenutosi a Bologna nel Sept. 1995) [10.1109/EUMA.1995.336949].
Electromagnetic Investigation of Travelling Wave Operation in AlGaAs-InGaAs Pseudomorphic HEMT's
FARINA, Marco;PIERANTONI, Luca;ROZZI, TULLIO
1995-01-01
Abstract
Considering a standard InGaAs-AIGaAs PM HEMT, we report an accurate theoretical e.m. characterisation of propagation phenomena arising in this structure performed by means of a full-wave model. Some discussion of the carrier transport phenomena is also provided.File in questo prodotto:
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