We describe a new approach to the rigorous electromagnetic analysis of active FET structures. Propagation characteristics, field and current distributions result from the solution of an integral eigenvalue equation of general form applicable to the broad FET family. The model rigorously accounts for conductor and dielectric losses as well as small signal amplification. It is moreover particularly suited to multilayer configurations, as the computational effort does not increase proportionally to the number of layers.
A New Technique for the Field Analysis of Active FET Devices / Farina, Marco; G., Gerini; Rozzi, Tullio. - 1:(1994), pp. 865-869. (Intervento presentato al convegno 24th European Microwave Conference tenutosi a Cannes (France) nel 5-9 sept 2004) [10.1109/EUMA.1994.337321].
A New Technique for the Field Analysis of Active FET Devices
FARINA, Marco;ROZZI, TULLIO
1994-01-01
Abstract
We describe a new approach to the rigorous electromagnetic analysis of active FET structures. Propagation characteristics, field and current distributions result from the solution of an integral eigenvalue equation of general form applicable to the broad FET family. The model rigorously accounts for conductor and dielectric losses as well as small signal amplification. It is moreover particularly suited to multilayer configurations, as the computational effort does not increase proportionally to the number of layers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
