The impact of parasitic effects of integrated inductors for RFIC is not negligible so an accurate model of their behaviour is necessary. This paper presents a numerical parameterized model of integrated inductor with hollow planar spiral geometry and poly-ground-shield. The model allows to choose the inductor geometry with better quality in relation to its spiral side length and number of turns. A validation of the model has been achieved by a 3D electromagnetic field solver. The inductor model has been applied to the synthesis of matching networks for a low noise amplifier operating in the (5 to 6) GHz frequency band
A parameterized numerical model of integrated inductors for synthesis of RFIC matching networks
BALLICCHIA, MAURO;GIGLI, STEFANO;ORCIONI, Simone
2007-01-01
Abstract
The impact of parasitic effects of integrated inductors for RFIC is not negligible so an accurate model of their behaviour is necessary. This paper presents a numerical parameterized model of integrated inductor with hollow planar spiral geometry and poly-ground-shield. The model allows to choose the inductor geometry with better quality in relation to its spiral side length and number of turns. A validation of the model has been achieved by a 3D electromagnetic field solver. The inductor model has been applied to the synthesis of matching networks for a low noise amplifier operating in the (5 to 6) GHz frequency bandFile in questo prodotto:
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