The impact of parasitic effects of integrated inductors for RFIC is not negligible so an accurate model of their behaviour is necessary. This paper presents a numerical parameterized model of integrated inductor with hollow planar spiral geometry and poly-ground-shield. The model allows to choose the inductor geometry with better quality in relation to its spiral side length and number of turns. A validation of the model has been achieved by a 3D electromagnetic field solver. The inductor model has been applied to the synthesis of matching networks for a low noise amplifier operating in the (5 to 6) GHz frequency band
A parameterized numerical model of integrated inductors for synthesis of RFIC matching networks / Ballicchia, Mauro; Gigli, Stefano; Orcioni, Simone. - STAMPA. - (2007), pp. 95-98. (Intervento presentato al convegno 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 tenutosi a Long Beach, CA nel 10-12 Jan. 2007) [10.1109/SMIC.2007.322778].
A parameterized numerical model of integrated inductors for synthesis of RFIC matching networks
BALLICCHIA, MAURO;GIGLI, STEFANO;ORCIONI, Simone
2007-01-01
Abstract
The impact of parasitic effects of integrated inductors for RFIC is not negligible so an accurate model of their behaviour is necessary. This paper presents a numerical parameterized model of integrated inductor with hollow planar spiral geometry and poly-ground-shield. The model allows to choose the inductor geometry with better quality in relation to its spiral side length and number of turns. A validation of the model has been achieved by a 3D electromagnetic field solver. The inductor model has been applied to the synthesis of matching networks for a low noise amplifier operating in the (5 to 6) GHz frequency bandI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
