Scanning microwave microscopy (SMM) utilizes near-field microwave radiation to offer unparalleled nanoscale material characterization; yet its widespread adoption is hindered by the sophisticated nature of the manual one-port calibration process. Solving this inverse problem is complicated and prohibitive for real-time use. Furthermore, manual calibration often fails to accurately track dynamic changes in probe tip geometry, which is a critical factor in near-field interaction and can result in persistent measurement uncertainty and operator-dependent errors. To overcome these barriers, this work introduces a substrate-referenced deep learning (DL) framework that automates the solution to this inverse problem. By decoupling static substrate parasitics from dynamic tip geometry, a TabPFN-based regressor chain with a root-meansquare error (RMSE) of 0.0086 infers error factors due to the effective probe shapes from a single approach curve, combining with an error correction factor from static substrate parasitics to realize real-time calibration, which greatly reduces calibration times by orders of magnitude and eliminates human variability, enabling real-time, quantitative SMM imaging that was previously unattainable. This method was validated on 2D tin selenide (SnSe) samples with various thicknesses on SiO2/Si++ and Si++ substrates, demonstrating accuracy comparable to expert manual calibration and reducing processing time from hours to seconds, transforming SMM into an accessible tool for the broader research community.
Calibration of Scanning Microwave Microscopy via Substrate-Referenced Machine Learning / Zhang, Y., Wang, X., Farina, M., Hwang, J.C.M., Zhu, Y., Mao, N., Wu, P., Kong, J.. - (2026). (107th ARFTG Microwave Measurement Conference, ARFTG 2026 Boston, USA 12 June 2026) [10.1109/ARFTG68740.2026.11614661].
Calibration of Scanning Microwave Microscopy via Substrate-Referenced Machine Learning
Farina M.;Hwang J. C. M.;
2026-01-01
Abstract
Scanning microwave microscopy (SMM) utilizes near-field microwave radiation to offer unparalleled nanoscale material characterization; yet its widespread adoption is hindered by the sophisticated nature of the manual one-port calibration process. Solving this inverse problem is complicated and prohibitive for real-time use. Furthermore, manual calibration often fails to accurately track dynamic changes in probe tip geometry, which is a critical factor in near-field interaction and can result in persistent measurement uncertainty and operator-dependent errors. To overcome these barriers, this work introduces a substrate-referenced deep learning (DL) framework that automates the solution to this inverse problem. By decoupling static substrate parasitics from dynamic tip geometry, a TabPFN-based regressor chain with a root-meansquare error (RMSE) of 0.0086 infers error factors due to the effective probe shapes from a single approach curve, combining with an error correction factor from static substrate parasitics to realize real-time calibration, which greatly reduces calibration times by orders of magnitude and eliminates human variability, enabling real-time, quantitative SMM imaging that was previously unattainable. This method was validated on 2D tin selenide (SnSe) samples with various thicknesses on SiO2/Si++ and Si++ substrates, demonstrating accuracy comparable to expert manual calibration and reducing processing time from hours to seconds, transforming SMM into an accessible tool for the broader research community.| File | Dimensione | Formato | |
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