Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl2. A recrystallization of SnS was achieved with both KI and SnCl2, but it has been observed that this phenomenon occurs only when SnS film is deposited at high temperature, whereas for low temperature-SnS film the treatment process produces a mix of secondary phases into the SnS matrix.
A study of SnS recrystallization by post deposition treatment / Di Mare, S.; Salavei, A.; Menossi, D.; Piccinelli, F.; Bernardi, P.; Artegiani, E.; Kumar, A.; Mariotto, G.; Romeo, A.. - 2016-November:(2016), pp. 7749627.431-7749627.434. (Intervento presentato al convegno 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 tenutosi a Portland, USA nel 5 - 10 June 2016) [10.1109/PVSC.2016.7749627].
A study of SnS recrystallization by post deposition treatment
Kumar A.;
2016-01-01
Abstract
Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl2. A recrystallization of SnS was achieved with both KI and SnCl2, but it has been observed that this phenomenon occurs only when SnS film is deposited at high temperature, whereas for low temperature-SnS film the treatment process produces a mix of secondary phases into the SnS matrix.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
