Two-dimensional materials are very sensitive to the surrounding environment because of their high surface-to-volume ratio. Herein, we investigated the electrical properties of few-layer ReS2 back-gated field effect transistors at different pressures. The lowering pressure increases the conductivity and reduces both the Ion/Ioff ratio and the hysteresis width, revealing that air molecules, such as H2O and O2, adsorbed on the ReS2 surface in ambient conditions, act as electron traps. The gas molecules adsorption and desorption processes also impact the photoresponse of the device. This was investigated by looking at the switching behaviour of the device under supercontinuum white laser pulses of different powers and durations in air, low vacuum, and high vacuum.
Pressure-dependent photoconductivity in two dimensional ReS2 / Intonti, K.; Faella, E.; Kumar, A.; Viscardi, L.; Giubileo, F.; Lam, H. T.; Anastasiou, K.; Craciun, M.; Russo, S.; Di Bartolomeo, A.. - (2023), pp. 368-372. (Intervento presentato al convegno IEEE NMDC 2023 - IEEE Nanotechnology Materials and Devices Conference (NMDC) tenutosi a Paestum, Italy nel 22-25 Ottobre 2023) [10.1109/NMDC57951.2023.10343870].
Pressure-dependent photoconductivity in two dimensional ReS2
Kumar A.;
2023-01-01
Abstract
Two-dimensional materials are very sensitive to the surrounding environment because of their high surface-to-volume ratio. Herein, we investigated the electrical properties of few-layer ReS2 back-gated field effect transistors at different pressures. The lowering pressure increases the conductivity and reduces both the Ion/Ioff ratio and the hysteresis width, revealing that air molecules, such as H2O and O2, adsorbed on the ReS2 surface in ambient conditions, act as electron traps. The gas molecules adsorption and desorption processes also impact the photoresponse of the device. This was investigated by looking at the switching behaviour of the device under supercontinuum white laser pulses of different powers and durations in air, low vacuum, and high vacuum.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
