Effect of PMMA capping layer on black phosphorus field effect transistor

Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Durante, O.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.

doi:10.1109/NMDC57951.2023.10343929

We report the electrical characterizations of multi-layer black phosphorus (BP)-based field-effect transistor (FET) capped and uncapped with a PMMA film. The PMMA capping film affects contact behavior and channel resistance. Further, the output characteristics show asymmetric and symmetric behavior when the device is capped and uncapped with PMMA, although in both cases a unipolar p-type conduction is confirmed. PMMA capped BP FET does not exhibit any modulation in the transfer characteristic. On the contrary, the uncapped BP device exhibits current modulation, and the calculated mobility is about 22 cm2 /Vs.

Effect of PMMA capping layer on black phosphorus field effect transistor / Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Durante, O.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.. - (2023), pp. 77-80. ( IEEE NMDC 2023 - IEEE Nanotechnology Materials and Devices Conference (NMDC) Paestum, Italy 22-25 Ottobre 2023) [10.1109/NMDC57951.2023.10343929].