Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air.
Scanning microwave microscopy of aluminum CMOS interconnect lines buried in oxide and water / Jin, Xin; Xiong, Kuanchen; Marstell, Roderick; Strandwitz, Nicholas C.; Hwang, James C. M.; Farina, Marco; Goritz, Alexander; Wietstruck, Matthias; Kaynak, Mehmet. - (2017), pp. 975-977. (Intervento presentato al convegno 47th European Microwave Conference tenutosi a Nuremberg, Germany nel 10-12 Oct. 2017) [10.23919/EuMC.2017.8231009].
Scanning microwave microscopy of aluminum CMOS interconnect lines buried in oxide and water
Farina, MarcoMethodology
;
2017-01-01
Abstract
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
