In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the “Top-of-the-barrier” approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model’s validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained
Extending ballistic graphene FET lumped element models to diffusive devices / Vincenzi, G.; Deligeorgis, G.; Coccetti, F.; Dragoman, M.; Pierantoni, Luca; Mencarelli, Davide; Plana, R.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - ELETTRONICO. - 76, October 2012:(2012), pp. 8-12. [10.1016/j.sse.2012.06.004]
Extending ballistic graphene FET lumped element models to diffusive devices
PIERANTONI, Luca;MENCARELLI, Davide;
2012-01-01
Abstract
In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the “Top-of-the-barrier” approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model’s validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtainedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
