In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.

Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors / Farina, Marco; Rozzi, Tullio. - (2003), pp. 53-56. (Intervento presentato al convegno 11th GAAS Symposium (jointly with 33rd European Microwave Conference 2003) tenutosi a Munich (Germany) nel Settembre).

Three-Dimensional Electromagnetic Approach to the Modeling of Linear Field Effect Transistors

FARINA, Marco;ROZZI, TULLIO
2003-01-01

Abstract

In this contribution we introduce a 3D electromagnetic approach to the modeling of active devices under the small-signal hypothesis. The proposed technique is validated by comparing measured and calculated results for a pseudomorphic High Electron Mobility Transistor (HEMT) in the millimeter-wave range.
2003
9781580538367
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11566/47916
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